参数项参数值
参数项参数值
DC Current Gain hFE Max450 mA
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min180
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Package / CaseTSMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SCR513RTL
Product CategoryBipolar Transistors - BJT
Series2SCR513p
Unit Weight0.005808 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR513R
USHTS8541290095
DescriptionBipolar Transistors - BJT Trans GP BJT NPN 50V 1A
Moisture Sensitivity Level1 (Unlimited)