参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current900 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.3 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min30
QualificationAEC-Q101
MXHTS85412999
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageON Semiconductor SMMBT3904LT3G
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
TARIC8541290000
Unit Weight0.001376 oz
SeriesMMBT3904L
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT NPN Bipolar Transistor
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)