参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 35 at 2 A, 5 V
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
BrandDiodes Incorporated
Unit Weight0.000282 oz
RoHS Details
SeriesFMMT49
Factory Pack Quantity10000
ImageDiodes Incorporated FMMT491ATC
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation500 mW
ManufacturerDiodes Incorporated
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)