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FQD18N20V2TM
厂牌：ONSEMI
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045737725
描述：MOSFET N-CH 200V 15A DPAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance140 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge26 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Channel ModeEnhancement
Fall Time62 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.009184 oz
SeriesFQD18N20V2
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild FQD18N20V2TM
Pd - Power Dissipation2.5 W
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerON Semiconductor
Factory Pack Quantity2500
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage200 V
DescriptionMOSFET 200V N-Ch adv QFET V2 Series
Number of Channels1 Channel
Rise Time133 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)