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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max210 at 2 mA, 5 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min210
Width1.3 mm
Height0.95 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000282 oz
SeriesBC857B
Pd - Power Dissipation350 mW
BrandROHM Semiconductor
Part # AliasesBC857B
ImageROHM Semiconductor BC857BT116
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP 45V 1MA
Moisture Sensitivity Level1 (Unlimited)