参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220
MXHTS85423999
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8542390990
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8542390000
CNHTS8542319000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8542399000
Unit Weight0.000265 oz
RoHS Details
Pd - Power Dissipation200 mW
SeriesBC857B
BrandDiodes Incorporated
ImageDiodes Incorporated BC857BS-13-F
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity10000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8542390001
DescriptionBipolar Transistors - BJT NPN Small SIG -50V -45V VCEO 6.0V VEBO
Moisture Sensitivity Level1 (Unlimited)