参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 650 mV
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
Width1.4 mm
Length3.05 mm
Height1 mm
JPHTS8541210101
MXHTS85412101
PackagingMouseReel
PackagingReel
PackagingCut Tape
KRHTS8541219000
BrandDiodes Incorporated
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
Unit Weight0.000282 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation300 mW
SeriesBC857B
DescriptionBipolar Transistors - BJT PNP BIPOLAR
ImageDiodes Incorporated BC857B-7-F
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)