参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.65 V
DC Collector/Base Gain hfe Min220
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
TARIC8541210000
RoHS Details
Unit Weight0.000296 oz
Pd - Power Dissipation330 mW
BrandPanjit
ImagePanjit BC857B_R1_00001
ManufacturerPanjit
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT /57B/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TP/GPT03-QI37/PJ///
Moisture Sensitivity Level1 (Unlimited)