RE1J002YNTCL

厂牌:ROHM Semiconductor
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000045739729
描述:Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
最新价格近期成交7单+
数量价格(含税)
1¥2.4950
10¥1.3952
100¥0.9193
500¥0.7050
1000¥0.6074
3000¥0.5171
6000¥0.4596
9000¥0.3939
24000¥0.3775
库存:0交期:4-7天起订:1增量:1
数量:
X
2.4950(单价)
合计:
¥2.50
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Rds On - Drain-Source Resistance2.2 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time17 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
MXHTS85412999
Package / CaseSOT-416-3
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
KRHTS8541219000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge-
Maximum Operating Temperature+ 150 C
ImageROHM Semiconductor RE1J002YNTCL
RoHS Details
Channel ModeEnhancement
CNHTS8541290000
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000212 oz
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Fall Time43 ns
DescriptionMOSFET Small Signal MOSFET N-CH .9V Drive .2A
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541210095
Part # AliasesRE1J002YN
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)