RE1J002YNTCL

厂牌：Rohm Semiconductor

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045739731

描述：Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage300 mV

TechnologySi

Id - Continuous Drain Current200 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time5 ns

Rds On - Drain-Source Resistance2.2 Ohms

Transistor Type1 N-Channel MOSFET

Typical Turn-Off Delay Time17 ns

MXHTS85412999

KRHTS8541219000

JPHTS8541290100

CAHTS8541290000

Mounting StyleSMD/SMT

Qg - Gate Charge-

Package / CaseSOT-416-3

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

ImageROHM Semiconductor RE1J002YNTCL

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

Channel ModeEnhancement

Factory Pack Quantity3000

Fall Time43 ns

SubcategoryMOSFETs

Product CategoryMOSFET

BrandROHM Semiconductor

Unit Weight0.000212 oz

ManufacturerROHM Semiconductor

DescriptionMOSFET Small Signal MOSFET N-CH .9V Drive .2A

Product TypeMOSFET

USHTS8541210095

Part # AliasesRE1J002YN

Pd - Power Dissipation150 mW

Vds - Drain-Source Breakdown Voltage50 V

Number of Channels1 Channel

Rise Time8 ns

Moisture Sensitivity Level1 (Unlimited)