参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min420
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
Unit Weight0.000176 oz
SeriesBC850
Pd - Power Dissipation330 mW
BrandInfineon Technologies
Part # AliasesBC85CWH6327XT SP000747418 BC850CWH6327XTSA1
ImageInfineon Technologies BC 850CW H6327
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT