RUF015N02TL

厂牌：Rohm Semiconductor

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045750290

描述：Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage300 mV

TechnologySi

Id - Continuous Drain Current1.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

Typical Turn-On Delay Time5 ns

Width1.7 mm

Rds On - Drain-Source Resistance180 mOhms

Transistor Type1 N-Channel Power MOSFET

Typical Turn-Off Delay Time20 ns

MXHTS85412999

Length2 mm

KRHTS8541299000

JPHTS8541290100

CAHTS8541290000

Qg - Gate Charge1.8 nC

Mounting StyleSMD/SMT

Package / CaseSOT-323-3

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

ProductMOSFET Small Signal

CNHTS8541210000

ImageROHM Semiconductor RUF015N02TL

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

Channel ModeEnhancement

Fall Time3 ns

Factory Pack Quantity3000

SeriesRUF015N02

SubcategoryMOSFETs

Product CategoryMOSFET

BrandROHM Semiconductor

Unit Weight0.000282 oz

DescriptionMOSFET Med Pwr, Sw MOSFET P Chan, 20V, 1.5A

ManufacturerROHM Semiconductor

Product TypeMOSFET

USHTS8541290095

Part # AliasesRUF015N02

Pd - Power Dissipation0.8 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time5 ns

Moisture Sensitivity Level1 (Unlimited)