参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width5.5 mm
Collector-Emitter Saturation Voltage0.5 V
Height2.3 mm
DC Collector/Base Gain hfe Min120
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseCPT-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor 2SD1758TLR
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
Series2SD1758
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
USHTS8541290095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 32V 2A
Pd - Power Dissipation10 W