参数项参数值
参数项参数值
Forward Transconductance - Min150 S
Vgs th - Gate-Source Threshold Voltage3.9 V
TechnologySi
Id - Continuous Drain Current137 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time36 ns
Rds On - Drain-Source Resistance1.3 mOhms
Typical Turn-Off Delay Time82 ns
Width3.95 mm
Height0.74 mm
Length6.35 mm
MXHTS85412999
Qg - Gate Charge17 nC
KRHTS8541299000
Package / CaseDirectFET-M4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time83 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR AUIRF8736M2TR
BrandInfineon / IR
Factory Pack Quantity4800
Product TypeMOSFET
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Auto FET 30V 18A 4.8Ohm 17nC
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
Number of Channels1 Channel
Rise Time119 ns
Moisture Sensitivity Level1 (Unlimited)