参数项参数值
参数项参数值
Forward Transconductance - Min300 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current115 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance7.5 Ohms
KRHTS8541409029
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541100901
CAHTS8541100090
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541100000
RoHS Details
ImageComchip Technology 2N7002-G
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandComchip Technology
Fall Time20 ns
ManufacturerComchip Technology
Factory Pack Quantity3000
Series2N7002
Product CategoryMOSFET
Unit Weight0.003951 oz
USHTS8541406050
Product TypeMOSFET
DescriptionMOSFET BVDD=60V ID=200mA
Pd - Power Dissipation360 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)