参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 100 mA, 1 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min160 at 100 mA, 1 V, 40 at 500 mA, 1 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
SeriesBC817
Pd - Power Dissipation200 mW
BrandNexperia
Part # Aliases934021930135
ImageNexperia BC817-25W,135
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity10000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS GP TAPE-11
Moisture Sensitivity Level1 (Unlimited)