参数项参数值
参数项参数值
ConfigurationDual
KRHTS8541219000
JPHTS8541210101
Forward Transconductance - Min100 mS
CAHTS8541210000
ImageDiodes Incorporated BSS138DW-7-F
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
DescriptionMOSFET 50V 200mW
Transistor PolarityN-Channel
Id - Continuous Drain Current200 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Height1 mm
Length2.2 mm
Typical Turn-On Delay Time20 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Rds On - Drain-Source Resistance3.5 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns
Package / CaseSOT-363-6
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Width1.35 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandDiodes Incorporated
RoHS Details
MXHTS85411001
ManufacturerDiodes Incorporated
SeriesBSS138
TARIC8541100000
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541100080
Unit Weight0.000212 oz
CNHTS8541210000
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)