参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance3.5 Ohms
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 50 C
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageDiodes Incorporated BSS138DWQ-13
TARIC8541290000
Channel ModeEnhancement
SubcategoryMOSFETs
Factory Pack Quantity10000
Product CategoryMOSFET
BrandDiodes Incorporated
Product TypeMOSFET
Unit Weight0.000265 oz
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation200 mW
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)