参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 900 mA
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.75 V
DC Collector/Base Gain hfe Min20
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000283 oz
SeriesMMBT4403L
Pd - Power Dissipation300 mW
BrandON Semiconductor
ImageON Semiconductor SMMBT4403LT1G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT SOT-23 XSTR PNP
Moisture Sensitivity Level1 (Unlimited)