参数项参数值
参数项参数值
DC Current Gain hFE Max300 at - 150 mA, - 2 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.75 V
DC Collector/Base Gain hfe Min100 at - 150 mA, - 2 V
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
ImagePanjit MMBT4403_R1_00001
Product CategoryBipolar Transistors - BJT
BrandPanjit
RoHS Details
TARIC8541210000
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT /M3A/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TP/GPT03-QI35/PJ///
SubcategoryTransistors
ManufacturerPanjit
Unit Weight0.000296 oz
USHTS8541290095
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)