参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 600 mA
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.75 V
DC Collector/Base Gain hfe Min20
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageComchip Technology MMBT4403-G
Factory Pack Quantity3000
BrandComchip Technology
Product CategoryBipolar Transistors - BJT
SeriesMMBT4403
RoHS Details
DescriptionBipolar Transistors - BJT VCEO=-40V IC=-600mA.
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerComchip Technology
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)