参数项参数值
参数项参数值
ConfigurationSingle
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
KRHTS8541219000
TechnologySi
Transistor PolarityNPN
Minimum Operating Temperature- 55 C
JPHTS8541210101
Emitter- Base Voltage VEBO5 V
CAHTS8541210000
QualificationAEC-Q101
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
RoHS Details
TARIC8541210000
MXHTS85412101
SeriesBC848BL
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000283 oz
CNHTS8541210000
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)