参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage600 mV
DC Collector/Base Gain hfe Min200
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation300 mW
SeriesBC848B
BrandDiodes Incorporated
ImageDiodes Incorporated BC848B-7-F
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN BIPOLAR