参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
Height0.95 mm
Width1.3 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSST-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 65 C
CNHTS8541290000
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001058 oz
Pd - Power Dissipation350 mW
SeriesBC848B
BrandROHM Semiconductor
Part # AliasesBC848B
ImageROHM Semiconductor BC848BT116
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 30V 1MA