参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current31 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Width6.22 mm
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time39 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge42 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR IRF5305STRRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time63 ns
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity800
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time66 ns
TypeHEXFET Power MOSFET