参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2 V
TechnologySi
Id - Continuous Drain Current- 31 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge42 nC
Package / CaseTO-263-2
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF5305STRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity800
Product TypeMOSFET
Pd - Power Dissipation110 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Vds - Drain-Source Breakdown Voltage- 55 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)