参数项参数值
参数项参数值
Forward Transconductance - Min0.007 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityN-Channel
Typical Turn-On Delay Time13 ns
Width4.7 mm
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingTube
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild IRF530A
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time36 ns
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
SeriesIRF530A
Factory Pack Quantity1000
Product CategoryMOSFET
Unit Weight0.063493 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET TO-220 N-Ch A-FET
Pd - Power Dissipation55 W
Part # AliasesIRF530A_NL
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time14 ns
TypeMOSFET