2N7002KDW-AU_R1_000A1

厂牌:Panjit International Inc.
包装:Cut Tape (CT) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000045756330
描述:MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected
最新价格近期成交11单+
数量价格(含税)
1¥1.4774
10¥0.9193
100¥0.5671
500¥0.4120
1000¥0.3611
库存:5,672交期:起订:1增量:1
数量:
X
1.4774(单价)
合计:
¥1.48
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance4 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Qg - Gate Charge0.8 nC
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandPanjit
ManufacturerPanjit
Product CategoryMOSFET
TARIC8541290000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3000
Fall Time23 ns
SubcategoryMOSFETs
DescriptionMOSFET /K27/TR/7"/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI53/PJ///
Unit Weight0.000280 oz
USHTS8541100080
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)