参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance4 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Qg - Gate Charge0.8 nC
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandPanjit
ManufacturerPanjit
Product CategoryMOSFET
TARIC8541290000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3000
Fall Time23 ns
SubcategoryMOSFETs
DescriptionMOSFET /K27/TR/7"/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI53/PJ///
Unit Weight0.000280 oz
USHTS8541100080
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)