参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min200
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingMouseReel
PackagingCut Tape
PackagingReel
Unit Weight0.000212 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageDiodes Incorporated BC847BS-7-F
SeriesBC847B
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541210075
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Moisture Sensitivity Level1 (Unlimited)