参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Collector-Emitter Saturation Voltage600 mV
Width1.4 mm
DC Collector/Base Gain hfe Min200
Height1 mm
Length3.05 mm
KRHTS8541219000
Package / CaseSOT-23-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated BC847B-7-F
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesBC847B
ManufacturerDiodes Incorporated
Unit Weight0.000282 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation300 mW
SubcategoryTransistors
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)