参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current180 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance3.7 mOhms
Transistor Type1 N-Channel
Width5.31 mm
Height20.7 mm
MXHTS85412999
Length15.87 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge150 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
TARIC8541290000
PackagingTube
BrandInfineon Technologies
RoHS Details
ImageInfineon Technologies IRFP4110PBF
Product CategoryMOSFET
Unit Weight1.340411 oz
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity400
Product TypeMOSFET
Pd - Power Dissipation370 W
USHTS8541290095
DescriptionMOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)