参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current70 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width5.31 mm
Height20.82 mm
MXHTS85412999
Length15.87 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge190 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageVishay Semiconductors IRFP064PBF
TARIC8541290000
PackagingTube
RoHS Details
Channel ModeEnhancement
SeriesIRFP
Factory Pack Quantity500
SubcategoryMOSFETs
BrandVishay Semiconductors
Product CategoryMOSFET
Unit Weight1.340411 oz
Product TypeMOSFET
DescriptionMOSFET 60V N-CH HEXFET MOSFET
ManufacturerVishay
USHTS8541290095
Pd - Power Dissipation300 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)