参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage900 mV
TechnologySi
Id - Continuous Drain Current360 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time9 ns
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
Fall Time4 ns
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8536699099
RoHS Details
Unit Weight0.000882 oz
BrandNexperia
Part # Aliases934064988215
ImageNexperia BSS138P,215
ManufacturerNexperia
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
Rise Time3 ns
DescriptionMOSFET N-CH 60 V 360 mA
Moisture Sensitivity Level1 (Unlimited)