参数项参数值
参数项参数值
Forward Transconductance - Min71 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Width4.5 mm
Height9.45 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
MXHTS85412999
Length10.2 mm
KRHTS8541299000
Qg - Gate Charge76 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-262-3
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingTube
RoHS Details
ImageInfineon / IR IRF3205ZLPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time67 ns
BrandInfineon / IR
Factory Pack Quantity1000
Unit Weight0.073511 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation170 W
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time95 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)