参数项参数值
参数项参数值
Forward Transconductance - Min700 ms
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage900 mV
TechnologySi
Id - Continuous Drain Current320 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
MXHTS85412101
KRHTS8541219000
Package / CaseTSSOP-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
Fall Time4 ns
ProductMOSFET Small Signal
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Unit Weight0.000265 oz
Pd - Power Dissipation320 mW
BrandNexperia
Part # Aliases934064989115
ImageNexperia BSS138PS,115
ManufacturerNexperia
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels2 Channel
Rise Time3 ns
DescriptionMOSFET N-CH 60 V 320 mA
Moisture Sensitivity Level1 (Unlimited)