参数项参数值
参数项参数值
Forward Transconductance - Min44 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time14 ns
Width4.4 mm
Rds On - Drain-Source Resistance8 mOhms
Typical Turn-Off Delay Time50 ns
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge146 nC
JPHTS8541290100
Package / CaseTO-220-3
Mounting StyleThrough Hole
CAHTS8541290000
PackagingTube
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Factory Pack Quantity1000
CNHTS8541290000
DescriptionMOSFET 55V, 98A, 8mOhm Automotive MOSFET
ImageInfineon / IR AUIRF3205
BrandInfineon / IR
Channel ModeEnhancement
Product TypeMOSFET
Fall Time65 ns
TARIC8541290000
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
Unit Weight0.211644 oz
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time101 ns
Moisture Sensitivity Level1 (Unlimited)