参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length6.5 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge97.3 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon / IR IRF3205STRLPBF
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity800
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon / IR
Unit Weight0.070548 oz
Product TypeMOSFET
DescriptionMOSFET MOSFT 55V 110A 8mOhm 97.3nC
ManufacturerInfineon
USHTS8541290095
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)