参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 120 V
Collector- Emitter Voltage VCEO Max- 120 V
Continuous Collector Current- 50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min180
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor 2SA1579U3T106R
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT Transistor for high-volt amp
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)