参数项参数值
参数项参数值
tariffCode85412900
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleTO-262
Gate Source Threshold Voltage Max4V
No. of Pins3Pins
usEccnEAR99
Drain Source Voltage Vds55V
MSLMSL 1 - Unlimited
Product RangeHEXFET
euEccnNLR
Channel TypeN Channel
Power Dissipation200W
Qualification-
productTraceabilityNo
Continuous Drain Current Id110A
Operating Temperature Max175°C
Transistor MountingThrough Hole
Drain Source On State Resistance0.008ohm
SVHCNo SVHC (08-Jul-2021)
Moisture Sensitivity Level1 (Unlimited)