参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1000 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min250
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesGPT-03TN
ManufacturerPanjit
Unit Weight0.000296 oz
BrandPanjit
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT /8C/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TN/GPT03-QI40/PJ///
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation330 mW
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)