参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min250
MXHTS85411001
KRHTS8541109000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541100000
PackagingReel
PackagingCut Tape
TARIC8541100000
RoHS Details
SeriesBC817-xx
Pd - Power Dissipation300 mW
BrandTaiwan Semiconductor
ImageTaiwan Semiconductor BC817-40 RFG
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerTaiwan Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541100050
DescriptionBipolar Transistors - BJT SOT-23, 50V, 0.5A, NPN Bipolar Transistor
Moisture Sensitivity Level1 (Unlimited)