参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min250
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.050717 oz
RoHS Details
SeriesBC817-xx
Pd - Power Dissipation300 mW
BrandTaiwan Semiconductor
ImageTaiwan Semiconductor BC817-40 RF
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerTaiwan Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT SOT-23 50V 0.5A NPN Bipolar Transistor