参数项参数值
参数项参数值
Forward Transconductance - Min0.24 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current0.33 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time23 ns
Rds On - Drain-Source Resistance1.4 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time56 ns
Height1.1 mm
Width1.3 mm
Length2.9 mm
Qg - Gate Charge2.38 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time61 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation0.36 W
BrandInfineon Technologies
Part # AliasesBSS83P H6327 SP000702486
ImageInfineon Technologies BSS83PH6327XTSA1
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time71 ns
DescriptionMOSFET P-Ch SOT-23-3
Moisture Sensitivity Level1 (Unlimited)