参数项参数值
参数项参数值
Forward Transconductance - Min0.24 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current0.33 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time23 ns
Width1.3 mm
Rds On - Drain-Source Resistance1.4 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time56 ns
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2.38 nC
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies BSS83PH6327XT
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time61 ns
Product TypeMOSFET
SeriesBSS83
ManufacturerInfineon
USHTS8541290095
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryMOSFET
DescriptionMOSFET P-Ch -60V -330mA SOT-23-3
Part # AliasesH6327 SP000702486 BSS83P BSS83PH6327XTSA1
Pd - Power Dissipation0.36 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time71 ns