参数项参数值
参数项参数值
Forward Transconductance - Min6.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.4 ns
Width2.38 mm
Height6.22 mm
Rds On - Drain-Source Resistance115 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
MXHTS85412999
Length6.73 mm
KRHTS8541299000
Qg - Gate Charge44 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-251-3
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingTube
ImageInfineon / IR IRFU3910PBF
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time25 ns
BrandInfineon / IR
Factory Pack Quantity3000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT 100V 15A 115mOhm 29.3nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation79 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time27 ns
Moisture Sensitivity Level1 (Unlimited)