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IRF100B201
厂牌：Infineon Technologies
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045759361
描述：Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min278 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current192 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance4.2 mOhms
Typical Turn-Off Delay Time110 ns
Width4.4 mm
MXHTS85412999
Height15.65 mm
Length10 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge170 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time100 ns
TARIC8541290000
PackagingTube
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF100B201
Product CategoryMOSFET
Unit Weight0.211644 oz
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation441 W
USHTS8541290095
DescriptionMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
Vds - Drain-Source Breakdown Voltage100 V
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time97 ns
Moisture Sensitivity Level1 (Unlimited)