参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current170 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Rds On - Drain-Source Resistance3.3 mOhms
Transistor Type1 N-Channel
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge120 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
PackagingTube
CNHTS8541290000
BrandInfineon Technologies
Factory Pack Quantity1000
ManufacturerInfineon
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT 75V 170A 4.1mOhm 120nC
ImageInfineon Technologies IRFB3207ZGPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation300 W
Vds - Drain-Source Breakdown Voltage75 V
Number of Channels1 Channel