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IRFB3207ZPBF
厂牌：Infineon Technologies
包装：Tube 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045760226
描述：MOSFET N-CH 75V 120A TO-220AB
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current170 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance3.3 mOhms
Transistor Type1 N-Channel
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge120 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageInfineon / IR IRFB3207ZPBF
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation300 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage75 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)