参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 1200 mA
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 1.6 V
MXHTS85412101
DC Collector/Base Gain hfe Min50
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
SeriesMMBT2907AL
ImageON Semiconductor SMMBT2907ALT3G
BrandON Semiconductor
Unit Weight0.000282 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity10000
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation350 mW
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)