参数项参数值
参数项参数值
Forward Transconductance - Min410 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current190 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.3 ns
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.4 ns
Width1.3 mm
Height1.1 mm
Length2.9 mm
MXHTS85411001
Qg - Gate Charge0.6 nC
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time22 ns
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541100000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation500 mW
SeriesBSS123
Part # AliasesBSS123N H6433 SP000939268
ImageInfineon Technologies BSS123NH6433XTMA1
BrandInfineon Technologies
Factory Pack Quantity10000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time3.2 ns
USHTS8541210095
DescriptionMOSFET N-Ch 100V 190mA SOT-23-3
Moisture Sensitivity Level1 (Unlimited)